FDD5680
- Mfr.Part #
- FDD5680
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 3
- Stock
- 28,429
- In Stock :
- 28,429
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Drain to Source Breakdown Voltage :
- 60V
- Weight :
- 260.37mg
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Current - Continuous Drain (Id) @ 25°C :
- 8.5A Ta
- Current Rating :
- 38A
- Turn On Delay Time :
- 15 ns
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1835pF @ 30V
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- Series :
- PowerTrench®
- Power Dissipation-Max :
- 2.8W Ta 60W Tc
- Rds On (Max) @ Id, Vgs :
- 21m Ω @ 8.5A, 10V
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 16 ns
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Factory Lead Time :
- 8 Weeks
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±20V
- Rise Time :
- 9ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 35 ns
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Power Dissipation :
- 60W
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 8.5A
- Resistance :
- 21mOhm
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 60V
- Datasheets
- FDD5680

N-Channel Tape & Reel (TR) 21m Ω @ 8.5A, 10V ±20V 1835pF @ 30V 46nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5680 Description
FDD5680 MOSFET is produced using an advanced PowerTrench? process that has been specially tailored to minimize the on-state resistance and yet maintain a low gate charge for superior switching performance.
FDD5680 Features
-
38 A, 60 V
-
RDS(on) = 21 mΩ @ VGS = 10 V
-
RDS(on) = 25 mΩ @ VGS = 6 V
-
Low gate charge (33nC typical)
-
Fast switching speed
-
High-performance trench technology for extremely low RDS(on)
FDD5680 Applications
-
DC/DC converter
-
Motor drives
-
Power switching circuits
-
Amplifier circuits
-
PWM applications
-
Regulator circuits
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