FDD5670

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Power Dissipation :

83W

Fall Time (Typ) :

24 ns

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Current - Continuous Drain (Id) @ 25°C :

52A Ta

Turn On Delay Time :

20 ns

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

73nC @ 10V

Continuous Drain Current (ID) :

52A

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 10 hours ago)

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Case Connection :

DRAIN

Factory Lead Time :

8 Weeks

Number of Pins :

3

Length :

6.73mm

Vgs (Max) :

±20V

Power Dissipation-Max :

3.8W Ta 83W Tc

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Width :

6.22mm

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

60V

Radiation Hardening :

No

Weight :

260.37mg

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Series :

PowerTrench®

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

60V

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

2739pF @ 15V

Number of Elements :

1

Current Rating :

52A

Threshold Voltage :

2.5V

Published :

2011

ECCN Code :

EAR99

Lead Free :

Lead Free

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

15m Ω @ 10A, 10V

Height :

2.39mm

Mounting Type :

Surface Mount

Turn-Off Delay Time :

60 ns

Rise Time :

12ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

48A