FDD5670

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

73nC @ 10V

Series :

PowerTrench®

Width :

6.22mm

Published :

2011

Power Dissipation-Max :

3.8W Ta 83W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

15m Ω @ 10A, 10V

Number of Pins :

3

Continuous Drain Current (ID) :

52A

Rise Time :

12ns

Height :

2.39mm

Mount :

Surface Mount

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

52A Ta

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

60V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 10 hours ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Factory Lead Time :

8 Weeks

Length :

6.73mm

Case Connection :

DRAIN

Threshold Voltage :

2.5V

FET Type :

N-Channel

Turn On Delay Time :

20 ns

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

48A

Current Rating :

52A

Fall Time (Typ) :

24 ns

Terminal Finish :

Tin (Sn)

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Voltage - Rated DC :

60V

Number of Elements :

1

JESD-609 Code :

e3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Turn-Off Delay Time :

60 ns

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2739pF @ 15V

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Weight :

260.37mg

Power Dissipation :

83W