FDD5810
- Mfr.Part #
- FDD5810
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 7.4A/37A DPAK
- Stock
- 46,736
- In Stock :
- 46,736
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-252AA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Finish :
- MATTE TIN
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Avalanche Energy Rating (Eas) :
- 45 mJ
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 7.4A Ta 37A Tc
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Drain-source On Resistance-Max :
- 0.027Ohm
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 7.7A
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- FET Type :
- N-Channel
- Qualification Status :
- COMMERCIAL
- Packaging :
- Tape and Reel (TR)
- DS Breakdown Voltage-Min :
- 60V
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 2
- Drain to Source Voltage (Vdss) :
- 60V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.89pF @ 25V
- Terminal Position :
- Single
- Power Dissipation-Max :
- 72W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 32A, 10V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Mounting Type :
- Surface Mount
- Datasheets
- FDD5810

N-Channel Tape & Reel (TR) 22m Ω @ 32A, 10V ±20V 1.89pF @ 25V 34nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5810 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 45 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.89pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [7.7A] according to its drain current.The DS breakdown voltage should be maintained above 60V to maintain normal operation.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
FDD5810 Features
the avalanche energy rating (Eas) is 45 mJ
a 60V drain to source voltage (Vdss)
FDD5810 Applications
There are a lot of Rochester Electronics, LLC
FDD5810 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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