FDD5N53TM

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Mfr.Part #
FDD5N53TM
Manufacturer
Fairchild Semiconductor
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock
1,970
In Stock :
1,970

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Vgs(th) (Max) @ Id :
5V @ 250μA
Gate to Source Voltage (Vgs) :
30V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Rise Time :
22ns
Turn-Off Delay Time :
28 ns
Vgs (Max) :
±30V
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Mounting Type :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
40W Tc
Continuous Drain Current (ID) :
4A
Number of Pins :
3
Current - Continuous Drain (Id) @ 25°C :
4A Tc
Packaging :
Tape and Reel (TR)
Power Dissipation :
40W
Rds On (Max) @ Id, Vgs :
1.5 Ω @ 2A, 10V
Operating Temperature :
-55°C~150°C TJ
Published :
2012
Number of Elements :
1
FET Type :
N-Channel
RoHS Status :
RoHS Compliant
Weight :
260.37mg
Mount :
Surface Mount
Drain to Source Breakdown Voltage :
530V
Input Capacitance (Ciss) (Max) @ Vds :
640pF @ 25V
Fall Time (Typ) :
20 ns
Series :
UniFET™
Datasheets
FDD5N53TM
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDD5N53TM from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, FDD5N53TM pinout, FDD5N53TM datasheet PDF, FDD5N53TM amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDD5N53TM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDD5N53TM


N-Channel Tape & Reel (TR) 1.5 Ω @ 2A, 10V ±30V 640pF @ 25V 15nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD5N53TM_WS Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 640pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4A.With a drain-source breakdown voltage of 530V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 530V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 28 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.

FDD5N53TM_WS Features


a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 530V voltage
the turn-off delay time is 28 ns


FDD5N53TM_WS Applications


There are a lot of ON Semiconductor
FDD5N53TM_WS applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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