FDD5N50UTM-WS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Element Configuration :

Single

JEDEC-95 Code :

TO-252AA

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

20 ns

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

3A

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Vgs (Max) :

±30V

JESD-609 Code :

e3

Power Dissipation-Max :

40W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Number of Terminations :

2

Power Dissipation :

40W

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

275 mJ

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

21ns

Mount :

Surface Mount

Number of Pins :

3

Turn-Off Delay Time :

27 ns

Case Connection :

DRAIN

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

FET Type :

N-Channel

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Rds On (Max) @ Id, Vgs :

2 Ω @ 1.5A, 10V

Drain to Source Breakdown Voltage :

500V

Number of Elements :

1

Turn On Delay Time :

14 ns

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

2Ohm

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

3A

Weight :

260.37mg

Series :

FRFET®