FDD5N50UTM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

40W Tc

Number of Terminations :

2

Power Dissipation :

40W

Terminal Form :

Gull wing

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Weight :

260.37mg

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-252AA

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

2 Ω @ 1.5A, 10V

Turn-Off Delay Time :

27 ns

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

500V

Drain-source On Resistance-Max :

2Ohm

Series :

FRFET®

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Rise Time :

21ns

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

5V @ 250μA

Vgs (Max) :

±30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Continuous Drain Current (ID) :

3A

Turn On Delay Time :

14 ns

Mount :

Surface Mount

Factory Lead Time :

8 Weeks

Avalanche Energy Rating (Eas) :

275 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Drain Current-Max (Abs) (ID) :

3A

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Fall Time (Typ) :

20 ns

Radiation Hardening :

No