FDD5N50UTF_WS
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- Mfr.Part #
- FDD5N50UTF_WS
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 3A DPAK
- Stock
- 37,378
- In Stock ：
- 37,378
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 2Ohm @ 1.5A, 10V
- Vgs (Max) :
- ±30V
- Series :
- FRFET®
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 650pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 500V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 40W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package :
- D-Pak
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Datasheets
- FDD5N50UTF_WS
N-Channel Tape & Reel (TR) 2Ohm @ 1.5A, 10V ±30V 650pF @ 25V 15nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5N50UTF_WS Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 650pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FDD5N50UTF_WS Features
a 500V drain to source voltage (Vdss)
FDD5N50UTF_WS Applications
There are a lot of ON Semiconductor
FDD5N50UTF_WS applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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