FDD5N50TF_WS
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- Mfr.Part #
- FDD5N50TF_WS
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 4A DPAK
- Stock
- 46,973
- In Stock ：
- 46,973
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 640pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- D-Pak
- Drain to Source Voltage (Vdss) :
- 500V
- Series :
- UniFET™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 1.4Ohm @ 2A, 10V
- Power Dissipation-Max :
- 40W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Datasheets
- FDD5N50TF_WS
N-Channel Tape & Reel (TR) 1.4Ohm @ 2A, 10V ±30V 640pF @ 25V 15nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5N50TF_WS Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 640pF @ 25V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
FDD5N50TF_WS Features
a 500V drain to source voltage (Vdss)
FDD5N50TF_WS Applications
There are a lot of ON Semiconductor
FDD5N50TF_WS applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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