FDD5N50NZFTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

3.7A

Number of Elements :

1

Element Configuration :

Single

Power Dissipation :

62.5W

FET Type :

N-Channel

Transistor Application :

SWITCHING

Length :

6.73mm

Turn On Delay Time :

12 ns

Weight :

260.37mg

Case Connection :

DRAIN

Rise Time :

19ns

Fall Time (Typ) :

22 ns

Transistor Element Material :

SILICON

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

3.7A Tc

Terminal Form :

Gull wing

Vgs (Max) :

±25V

Terminal Finish :

Tin (Sn)

Series :

UniFET-II™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Height :

2.39mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

1.75 Ω @ 1.85A, 10V

Gate to Source Voltage (Vgs) :

25V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

5 Weeks

Published :

2004

Turn-Off Delay Time :

31 ns

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Number of Terminations :

2

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

485pF @ 25V

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

500V

Mount :

Surface Mount

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

62.5W Tc

Number of Pins :

3

Width :

6.22mm

Mounting Type :

Surface Mount