FDD5N50FTM-WS

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Mfr.Part #
FDD5N50FTM-WS
Manufacturer
onsemi
Package / Case
DPAK
Datasheet
Download
Description
MOSFET N-CH 500V 3.5A DPAK
Stock
41,151
In Stock :
41,151

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Terminal Finish :
Tin (Sn)
Pbfree Code :
yes
Mount :
Surface Mount
Drain to Source Voltage (Vdss) :
500V
Gate to Source Voltage (Vgs) :
30V
Turn-Off Delay Time :
28 ns
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
40W
Power Dissipation :
40W
Packaging :
Tape and Reel (TR)
Rise Time :
22ns
Drain to Source Resistance :
1.55Ohm
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Number of Elements :
1
Max Operating Temperature :
150°C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current (ID) :
3.5A
Weight :
260.37mg
Package / Case :
DPAK
Factory Lead Time :
9 Weeks
Drain to Source Breakdown Voltage :
500V
Fall Time (Typ) :
20 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Min Operating Temperature :
-55°C
Input Capacitance :
650pF
Reach Compliance Code :
not_compliant
Rds On Max :
1.55 Ω
Datasheets
FDD5N50FTM-WS
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD5N50FTM-WS from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:DPAK, FDD5N50FTM-WS pinout, FDD5N50FTM-WS datasheet PDF, FDD5N50FTM-WS amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD5N50FTM-WS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD5N50FTM-WS


Tape & Reel (TR) 500V DPAK

FDD5N50FTM-WS Overview


The drain current is the maximum continuous current the device can conduct, and this device has 3.5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 28 ns.This device has a drain-to-source resistance of 1.55Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).

FDD5N50FTM-WS Features


a continuous drain current (ID) of 3.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 28 ns
single MOSFETs transistor is 1.55Ohm
a 500V drain to source voltage (Vdss)


FDD5N50FTM-WS Applications


There are a lot of ON Semiconductor
FDD5N50FTM-WS applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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