FDC6561AN

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Dual Supply Voltage :

30V

Element Configuration :

Dual

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

960mW

Transistor Element Material :

SILICON

Turn-Off Delay Time :

12 ns

FET Feature :

Logic Level Gate

Contact Plating :

Tin

Voltage :

30V

Length :

3mm

Number of Elements :

2

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

3V @ 250µA

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

2.5A

Factory Lead Time :

10 Weeks

Width :

1.7mm

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Power Dissipation :

960mW

Voltage - Rated DC :

30V

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Height :

1mm

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Published :

2017

Pbfree Code :

yes

Turn On Delay Time :

6 ns

Power - Max :

700mW

Rise Time :

10ns

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 15V

Number of Terminations :

6

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount

Current :

24A

Rds On (Max) @ Id, Vgs :

95m Ω @ 2.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain to Source Breakdown Voltage :

30V

Number of Pins :

6

Series :

PowerTrench®

Nominal Vgs :

1.8 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Resistance :

95mOhm

Fall Time (Typ) :

10 ns

Current Rating :

2.5A