FDC608PZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

13 Weeks

Threshold Voltage :

-1V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Fall Time (Typ) :

8 ns

Drain to Source Voltage (Vdss) :

20V

Lead Free :

Lead Free

Current Rating :

-5.8A

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.6W

Nominal Vgs :

-1 V

Mount :

Surface Mount

Continuous Drain Current (ID) :

5.8A

Pulsed Drain Current-Max (IDM) :

20A

Dual Supply Voltage :

-20V

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

13 ns

Drain to Source Breakdown Voltage :

-20V

JESD-609 Code :

e3

Width :

1.7mm

Resistance :

30mOhm

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

5.8A Ta

Published :

2006

Turn-Off Delay Time :

91 ns

Mounting Type :

Surface Mount

Number of Pins :

6

Vgs (Max) :

±12V

Rise Time :

8ns

Gate to Source Voltage (Vgs) :

12V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Weight :

36mg

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Number of Elements :

1

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1330pF @ 10V

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

-20V

Rds On (Max) @ Id, Vgs :

30m Ω @ 5.8A, 4.5V

FET Type :

P-Channel

Element Configuration :

Single

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Termination :

SMD/SMT

Power Dissipation-Max :

1.6W Ta

Length :

3mm

Height :

1mm

Number of Terminations :

6

Terminal Position :

Dual

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 4.5V