FDC608PZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Height :

1mm

Radiation Hardening :

No

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

12V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 4.5V

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Drain to Source Breakdown Voltage :

-20V

Dual Supply Voltage :

-20V

JESD-609 Code :

e3

Pbfree Code :

yes

Terminal Position :

Dual

Power Dissipation-Max :

1.6W Ta

Turn On Delay Time :

13 ns

Contact Plating :

Tin

Fall Time (Typ) :

8 ns

Number of Terminations :

6

Mounting Type :

Surface Mount

Element Configuration :

Single

Nominal Vgs :

-1 V

Continuous Drain Current (ID) :

5.8A

Rise Time :

8ns

Rds On (Max) @ Id, Vgs :

30m Ω @ 5.8A, 4.5V

Number of Pins :

6

Terminal Form :

Gull wing

Width :

1.7mm

Transistor Element Material :

SILICON

Turn-Off Delay Time :

91 ns

Length :

3mm

Vgs (Max) :

±12V

Current - Continuous Drain (Id) @ 25°C :

5.8A Ta

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Factory Lead Time :

13 Weeks

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Weight :

36mg

FET Type :

P-Channel

Power Dissipation :

1.6W

Input Capacitance (Ciss) (Max) @ Vds :

1330pF @ 10V

Threshold Voltage :

-1V

Voltage - Rated DC :

-20V

Resistance :

30mOhm

Series :

PowerTrench®

Current Rating :

-5.8A

ECCN Code :

EAR99

Mount :

Surface Mount

Termination :

SMD/SMT

Published :

2006

Drain to Source Voltage (Vdss) :

20V

Pulsed Drain Current-Max (IDM) :

20A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ