FDC606P
- Mfr.Part #
- FDC606P
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 6A SUPERSOT6
- Stock
- 86
- In Stock :
- 86
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 10 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Junction Temperature (Tj) :
- 150°C
- Width :
- 1.7mm
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 6A, 4.5V
- Power Dissipation :
- 1.6W
- Number of Pins :
- 6
- Threshold Voltage :
- -500mV
- Drain Current-Max (Abs) (ID) :
- 6A
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 4.5V
- Vgs (Max) :
- ±8V
- Current Rating :
- -6A
- Drain to Source Voltage (Vdss) :
- 12V
- Weight :
- 36mg
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 70 ns
- Mount :
- Surface Mount
- Dual Supply Voltage :
- -12V
- Transistor Element Material :
- SILICON
- Resistance :
- 26mOhm
- Published :
- 2001
- Drain to Source Breakdown Voltage :
- -12V
- Voltage - Rated DC :
- -12V
- Operating Mode :
- ENHANCEMENT MODE
- Termination :
- SMD/SMT
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 89 ns
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Number of Terminations :
- 6
- Terminal Position :
- Dual
- Turn On Delay Time :
- 11 ns
- Height :
- 1.1mm
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 6A Ta
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- -6A
- Power Dissipation-Max :
- 1.6W Ta
- ECCN Code :
- EAR99
- Nominal Vgs :
- -500 mV
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 8V
- Terminal Form :
- Gull wing
- Length :
- 3mm
- Series :
- PowerTrench®
- FET Type :
- P-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1699pF @ 6V
- JESD-609 Code :
- e3
- Rise Time :
- 10ns
- Number of Channels :
- 1
- Datasheets
- FDC606P

P-Channel Tape & Reel (TR) 26m Ω @ 6A, 4.5V ±8V 1699pF @ 6V 25nC @ 4.5V 12V SOT-23-6 Thin, TSOT-23-6
FDC606P Description
The low voltage PowerTrench technology is used in the FDC606P P-Channel 1.8V MOSFET. The FDC606P MOSFET has been designed with battery power control in mind.
FDC606P Features
-
-6 A, -12V
-
RDS(on) = 26 mΩ@ VGS = -4.5 V
-
RDS(on) = 35 mΩ@ VGS = -2.5 V
-
RDS(on) = 53 mΩ@ VGS = -1.8 V
-
Fast switching speed
-
High power and current handling capability
FDC606P Applications
-
Battery management
-
Load switch
-
Battery protection
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