FDC602P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

11 ns

Voltage :

20V

Termination :

SMD/SMT

Gate to Source Voltage (Vgs) :

12V

Mount :

Surface Mount

Radiation Hardening :

No

Width :

1.7mm

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

35m Ω @ 5.5A, 4.5V

Factory Lead Time :

10 Weeks

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Drain to Source Breakdown Voltage :

-20V

Voltage - Rated DC :

-20V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.6W Ta

Current Rating :

-5.5A

Height :

1.1mm

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Number of Elements :

1

Terminal Form :

Gull wing

Nominal Vgs :

-900 mV

Threshold Voltage :

-900mV

Number of Terminations :

6

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1456pF @ 10V

Max Junction Temperature (Tj) :

150°C

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

5.5A Ta

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Number of Pins :

6

Pbfree Code :

yes

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Vgs (Max) :

±12V

Series :

PowerTrench®

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Turn On Delay Time :

15 ns

Contact Plating :

Tin

Length :

3mm

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Dual Supply Voltage :

-20V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Number of Channels :

1

Power Dissipation :

1.6W

Published :

2001

Turn-Off Delay Time :

57 ns

Continuous Drain Current (ID) :

-5.5A

Rise Time :

11ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

35mOhm

Current :

55A