FDC602P
- Mfr.Part #
- FDC602P
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 5.5A SUPERSOT6
- Stock
- 71,257
- In Stock :
- 71,257
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current :
- 55A
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Vgs (Max) :
- ±12V
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 5.5A, 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Ta
- Max Junction Temperature (Tj) :
- 150°C
- Power Dissipation-Max :
- 1.6W Ta
- Drain to Source Breakdown Voltage :
- -20V
- Current Rating :
- -5.5A
- FET Type :
- P-Channel
- Height :
- 1.1mm
- Power Dissipation :
- 1.6W
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 6
- Published :
- 2001
- Continuous Drain Current (ID) :
- -5.5A
- ECCN Code :
- EAR99
- Number of Channels :
- 1
- Threshold Voltage :
- -900mV
- Nominal Vgs :
- -900 mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage :
- 20V
- Lead Free :
- Lead Free
- Dual Supply Voltage :
- -20V
- Number of Terminations :
- 6
- Number of Elements :
- 1
- Width :
- 1.7mm
- Series :
- PowerTrench®
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 4.5V
- Factory Lead Time :
- 10 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Contact Plating :
- Tin
- Turn On Delay Time :
- 15 ns
- Rise Time :
- 11ns
- Length :
- 3mm
- Voltage - Rated DC :
- -20V
- Gate to Source Voltage (Vgs) :
- 12V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1456pF @ 10V
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 11 ns
- Resistance :
- 35mOhm
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Termination :
- SMD/SMT
- Turn-Off Delay Time :
- 57 ns
- Datasheets
- FDC602P
FDC602P Documents

P-Channel Tape & Reel (TR) 35m Ω @ 5.5A, 4.5V ±12V 1456pF @ 10V 20nC @ 4.5V SOT-23-6 Thin, TSOT-23-6
FDC602P Description
FDC602P is a type of P-channel PowerTrench? MOSFET provided by ON Semiconductor based on the advanced PowerTrench? process. It is able to provide low on-state resistance while maintaining a fast switching speed. Due to its specific characteristics and reliable performance, it is ideally suitable for power management applications with a wide range of gate drive voltage.
FDC602P Features
-
Low gate charge
-
Low RDS (on)
-
Low on-state resistance
-
Superior switching performance
-
Available in the SuperSOT-6 package
FDC602P Applications
-
Load switch
-
Battery management
-
Battery protection
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