FDC6036P
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- Mfr.Part #
- FDC6036P
- Manufacturer
- onsemi
- Package / Case
- 6-SSOT Flat-lead, SuperSOT™-6 FLMP
- Datasheet
- Download
- Description
- MOSFET 2P-CH 20V 5A 6SSOT
- Stock
- 43,827
- In Stock ：
- 43,827
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Drain to Source Voltage (Vdss) :
- 20V
- Package / Case :
- 6-SSOT Flat-lead, SuperSOT™-6 FLMP
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 4.5V
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- 2 P-Channel (Dual)
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- FET Feature :
- Logic Level Gate
- Rds On (Max) @ Id, Vgs :
- 44mOhm @ 5A, 4.5V
- Power - Max :
- 900mW
- Series :
- PowerTrench®
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- SuperSOT™-6
- Input Capacitance (Ciss) (Max) @ Vds :
- 992pF @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 5A
- Datasheets
- FDC6036P
FDC6036P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDC6036P Description
The FDC6036P P-Channel 2.5V MOSFET is manufactured utilizing an innovative PowerTrench method that has been carefully designed to minimize on-state resistance while maintaining a low gate charge for enhanced switching performance. These devices were created to provide outstanding power dissipation in a very tiny footprint for situations where larger, more expensive SO-8 and TSSOP-8 packages are impracticable.
FDC6036P Features
-
-1.9 A, -20 V
-
RDS(on) = 0.170 Ω @ VGS = -4.5 V
-
RDS(on) = 0.250 Ω @ VGS = -2.5 V
-
Low gate charge (2.3nC typical)
-
Fast switching speed
-
High-performance trench technology for extremely low RDS(ON)
-
Super SOT-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
FDC6036P Applications
-
Battery management/Charger Application
-
Load switch
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