FDC604P
- Mfr.Part #
- FDC604P
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 5.5A SUPERSOT6
- Stock
- 101,469
- In Stock :
- 101,469
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 13 ns
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- -700mV
- Terminal Position :
- Dual
- Voltage - Rated DC :
- -20V
- RoHS Status :
- ROHS3 Compliant
- Nominal Vgs :
- -700 mV
- Fall Time (Typ) :
- 11 ns
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 5.5A, 4.5V
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 10 Weeks
- Turn-Off Delay Time :
- 90 ns
- Resistance :
- 33mOhm
- Weight :
- 36mg
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 8V
- Number of Terminations :
- 6
- Power Dissipation-Max :
- 1.6W Ta
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Ta
- Element Configuration :
- Single
- Current Rating :
- -5.5A
- FET Type :
- P-Channel
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Series :
- PowerTrench®
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- -5.5A
- Drain to Source Voltage (Vdss) :
- 20V
- Length :
- 3mm
- Height :
- 1.1mm
- Vgs (Max) :
- ±8V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 4.5V
- Operating Mode :
- ENHANCEMENT MODE
- Max Junction Temperature (Tj) :
- 150°C
- Transistor Element Material :
- SILICON
- Published :
- 2001
- Rise Time :
- 11ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1926pF @ 10V
- Number of Pins :
- 6
- Drain to Source Breakdown Voltage :
- -20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 1.7mm
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Number of Channels :
- 1
- Power Dissipation :
- 1.6W
- Terminal Form :
- Gull wing
- Datasheets
- FDC604P

P-Channel Tape & Reel (TR) 33m Ω @ 5.5A, 4.5V ±8V 1926pF @ 10V 30nC @ 4.5V 20V SOT-23-6 Thin, TSOT-23-6
FDC604P Description
FDC604P is a P-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 20V. The operating temperature of the FDC604P is -55°C~150°C TJ and its maximum power dissipation is 1.6W Ta. FDC604P has 6 pins and it is available in Tape & Reel (TR) packaging way. This P-Channel 1.8V specified MOSFET uses a low voltage PowerTrench process. It has been optimized for battery power management applications.
FDC604P Features
-
-5.5 A, -20 V
-
RDS(on) = 33 mΩ @ VGS = -4.5V
-
RDS(on) = 43 mΩ @ VGS = -2.5V
-
RDS(on) = 60 mΩ @ VGS = -1.8V
-
Fast switching speed
-
High performance trench technology for extremelylow RDS(ON)
FDC604P Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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