FDC6000NZ
- Mfr.Part #
- FDC6000NZ
- Manufacturer
- onsemi
- Package / Case
- 6-SSOT Flat-lead, SuperSOT™-6 FLMP
- Datasheet
- Download
- Description
- MOSFET 2N-CH 20V 7.3A 6SSOT
- Stock
- 22,299
- In Stock :
- 22,299
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Package / Case :
- 6-SSOT Flat-lead, SuperSOT™-6 FLMP
- FET Feature :
- Logic Level Gate
- Drain to Source Voltage (Vdss) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 4.5V
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- SuperSOT™-6 FLMP
- Input Capacitance (Ciss) (Max) @ Vds :
- 840pF @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 7.3A
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 20mOhm @ 6.5A, 4.5V
- FET Type :
- 2 N-Channel (Dual)
- Power - Max :
- 1.2W
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- PowerTrench®
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FDC6000NZ
FDC6000NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDC6000NZ Description
The FDC6000NZ N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
FDC6000NZ Features
-
6.5 A, 20 V RDS(ON) = 20 mΩ @ VGS = 4.5 V
RDS(ON) = 28 mΩ @ VGS = 2.5 V
-
ESD protection diode (note 3)
-
High-performance trench technology for extremely low RDS(ON)
-
FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size
FDC6000NZ Applications
-
Battery management/Charger Application
-
Load switch
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