FDC608PZ-F171

Manufacturer :

onsemi

Product Category :

Specialized ICs

Transistor Application :

SWITCHING

Vgs (Max) :

±12V

Power Dissipation :

1.6

Number of Elements :

1

Technology :

MOSFET (Metal Oxide)

Power Dissipation-Max (Abs) :

1.6 W

RoHS :

Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

P-Channel

Number of Terminals :

6

Package Shape :

RECTANGULAR

Lifecycle Status :

Production (Last Updated: 2 years ago)

Power Dissipation (Max) :

800mW (Ta)

Channel Type :

P

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

Mounting Type :

Surface Mount

Terminal Position :

Dual

Surface Mount :

yes

Drain-source On Resistance-Max :

0.03 Ω

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Brand Name :

ON Semiconductor

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Series :

*

Input Capacitance (Ciss) (Max) @ Vds :

1330 pF @ 10 V

Current - Continuous Drain (Id) @ 25°C :

5.8A (Ta)

Continuous Drain Current Id :

5.8

Product Status :

Active

Gate Charge (Qg) (Max) @ Vgs :

23 nC @ 4.5 V

Terminal Form :

Gull wing

Manufacturer :

ON Semiconductor

Manufacturer Lifecycle Status :

ACTIVE (Last Updated: 2 years ago)

FET Feature :

-

Rds On (Max) @ Id, Vgs :

30mOhm @ 5.8A, 4.5V

Operating Temperature :

-55°C ~ 150°C (TJ)

Package :

Bulk

DS Breakdown Voltage-Min :

20 V

Transistor Element Material :

SILICON

Supplier Device Package :

SuperSOT™-6

JESD-30 Code :

R-PDSO-G6

Reach Compliance Code :

Compliant

Vgs(th) (Max) @ Id :

1.5V @ 250µA

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

20 V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

1 Week