FDC6306P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

1999

Threshold Voltage :

-900mV

Resistance :

170mOhm

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Nominal Vgs :

-900 mV

Max Power Dissipation :

960mW

Width :

1.7mm

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Fall Time (Typ) :

9 ns

Number of Elements :

2

FET Type :

2 P-Channel (Dual)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Rds On (Max) @ Id, Vgs :

170m Ω @ 1.9A, 4.5V

Drain to Source Breakdown Voltage :

-20V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Factory Lead Time :

10 Weeks

Drain to Source Voltage (Vdss) :

20V

Voltage - Rated DC :

-20V

Turn On Delay Time :

6 ns

Turn-Off Delay Time :

14 ns

Gate to Source Voltage (Vgs) :

8V

REACH SVHC :

No SVHC

Power - Max :

700mW

Transistor Application :

SWITCHING

Current Rating :

-1.9A

Power Dissipation :

960mW

Rise Time :

9ns

Dual Supply Voltage :

-20V

Series :

PowerTrench®

Element Configuration :

Dual

Continuous Drain Current (ID) :

1.9A

Input Capacitance (Ciss) (Max) @ Vds :

441pF @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Length :

3mm

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

36mg

Number of Pins :

6

FET Feature :

Logic Level Gate

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Height :

1mm

Gate Charge (Qg) (Max) @ Vgs :

4.2nC @ 4.5V

Packaging :

Tape and Reel (TR)