FDC6306P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

8V

Current Rating :

-1.9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

700mW

Input Capacitance (Ciss) (Max) @ Vds :

441pF @ 10V

Radiation Hardening :

No

FET Feature :

Logic Level Gate

Nominal Vgs :

-900 mV

Terminal Form :

Gull wing

Weight :

36mg

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Factory Lead Time :

10 Weeks

Resistance :

170mOhm

Series :

PowerTrench®

Continuous Drain Current (ID) :

1.9A

Height :

1mm

Element Configuration :

Dual

JESD-609 Code :

e3

Rise Time :

9ns

Pbfree Code :

yes

Voltage - Rated DC :

-20V

Max Power Dissipation :

960mW

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

1.7mm

Dual Supply Voltage :

-20V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Fall Time (Typ) :

9 ns

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Number of Terminations :

6

Turn-Off Delay Time :

14 ns

Turn On Delay Time :

6 ns

Lead Free :

Lead Free

Threshold Voltage :

-900mV

Power Dissipation :

960mW

Rds On (Max) @ Id, Vgs :

170m Ω @ 1.9A, 4.5V

Drain to Source Breakdown Voltage :

-20V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Pins :

6

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

4.2nC @ 4.5V

FET Type :

2 P-Channel (Dual)

Number of Elements :

2

Length :

3mm

Published :

1999