FDC6302P

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Turn On Delay Time :

5 ns

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Dual Supply Voltage :

-25V

Rds On (Max) @ Id, Vgs :

10 Ω @ 200mA, 4.5V

JESD-609 Code :

e3

Power Dissipation :

900mW

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Max Power Dissipation :

900mW

Rise Time :

8ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

0.31nC @ 4.5V

Current Rating :

-120mA

Height :

1.12mm

Lead Free :

Lead Free

Element Configuration :

Dual

Voltage - Rated DC :

-25V

Length :

3mm

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

11pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

700mW

Transistor Element Material :

SILICON

Number of Elements :

2

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

8V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

5 ns

FET Type :

2 P-Channel (Dual)

Published :

1997

Continuous Drain Current (ID) :

-120mA

Factory Lead Time :

10 Weeks

Drain to Source Voltage (Vdss) :

25V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Number of Terminations :

6

Turn-Off Delay Time :

9 ns

Transistor Application :

SWITCHING

Weight :

36mg

Width :

1.68mm

Terminal Form :

Gull wing

FET Feature :

Logic Level Gate

Pbfree Code :

yes

Threshold Voltage :

-1V

Nominal Vgs :

-1 V

Current - Continuous Drain (Id) @ 25°C :

120mA

Drain to Source Breakdown Voltage :

-25V

Number of Pins :

6

Termination :

SMD/SMT

Operating Temperature :

-55°C~150°C TJ