EM6K1T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Number of Pins :

6

Power Dissipation :

150mW

Gate to Source Voltage (Vgs) :

20V

Resistance :

13Ohm

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

13pF @ 5V

Termination :

SMD/SMT

Lead Free :

Lead Free

Mount :

Surface Mount

Current Rating :

100mA

Height :

500μm

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-563, SOT-666

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

8 Ω @ 10mA, 4V

FET Type :

2 N-Channel (Dual)

Continuous Drain Current (ID) :

100mA

RoHS Status :

ROHS3 Compliant

Width :

1.2mm

Max Power Dissipation :

150mW

Terminal Form :

Flat

Turn-Off Delay Time :

80 ns

Element Configuration :

Dual

Voltage - Rated DC :

30V

Fall Time (Typ) :

35 ns

Terminal Finish :

TIN COPPER

Nominal Vgs :

1.5 V

Dual Supply Voltage :

30V

JESD-609 Code :

e2

Drain Current-Max (Abs) (ID) :

0.1A

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

10

Operating Temperature :

150°C TJ

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Turn On Delay Time :

15 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Number of Terminations :

6

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Part Number :

*K1

Peak Reflow Temperature (Cel) :

260

Published :

2006

Vgs(th) (Max) @ Id :

1.5V @ 100μA

Transistor Element Material :

SILICON

Rise Time :

35ns

Length :

1.6mm