EM6K7T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Turn On Delay Time :

5 ns

Drain Current-Max (Abs) (ID) :

0.2A

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Flat

Factory Lead Time :

16 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 10V

Mount :

Surface Mount

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Temperature :

150°C TJ

Number of Terminations :

6

FET Type :

2 N-Channel (Dual)

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

1V @ 1mA

Base Part Number :

*K7

Lead Free :

Lead Free

Number of Pins :

6

Published :

2009

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

1.4Ohm

Turn-Off Delay Time :

15 ns

Fall Time (Typ) :

10 ns

Gate to Source Voltage (Vgs) :

8V

Max Power Dissipation :

150mW

Rise Time :

10ns

Pin Count :

6

Packaging :

Digi-Reel®

Time@Peak Reflow Temperature-Max (s) :

10

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Package / Case :

SOT-563, SOT-666

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

200mA

DS Breakdown Voltage-Min :

20V

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 200mA, 2.5V

ECCN Code :

EAR99

Mounting Type :

Surface Mount