EM6K33T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

50V

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

8V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

10

Drain to Source Voltage (Vdss) :

50V

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 10V

Number of Channels :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Terminal Finish :

TIN COPPER

FET Feature :

Logic Level Gate, 1.2V Drive

Vgs(th) (Max) @ Id :

1V @ 1mA

Number of Elements :

2

JESD-609 Code :

e2

Max Power Dissipation :

150mW

Package / Case :

SOT-563, SOT-666

Turn On Delay Time :

4 ns

Pin Count :

6

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Published :

2010

Lead Free :

Lead Free

Turn-Off Delay Time :

15 ns

Rise Time :

6ns

Operating Temperature :

150°C TJ

Terminal Form :

Flat

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 200mA, 4.5V

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

JESD-30 Code :

R-PDSO-F6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

55 ns

Continuous Drain Current (ID) :

200mA

Peak Reflow Temperature (Cel) :

260

FET Type :

2 N-Channel (Dual)

Transistor Element Material :

SILICON

Factory Lead Time :

16 Weeks