EM6K31T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

60V

Pin Count :

6

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Logic Level Gate

ECCN Code :

EAR99

FET Type :

2 N-Channel (Dual)

Base Part Number :

*K31

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 250mA, 10V

Terminal Form :

Flat

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Published :

2010

Turn On Delay Time :

3.5 ns

Fall Time (Typ) :

28 ns

Mounting Type :

Surface Mount

Number of Elements :

2

Number of Pins :

6

Drain to Source Voltage (Vdss) :

60V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.3V @ 1mA

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

15pF @ 25V

Continuous Drain Current (ID) :

250mA

Pbfree Code :

yes

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Package / Case :

SOT-563, SOT-666

Operating Temperature :

150°C TJ

Max Power Dissipation :

120mW

Time@Peak Reflow Temperature-Max (s) :

10

Number of Channels :

2

Power - Max :

150mW

Factory Lead Time :

16 Weeks

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

18 ns

Rise Time :

5ns

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin/Copper (Sn/Cu)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

6