EM6K6T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2007

Package / Case :

SOT-563, SOT-666

Operating Temperature :

150°C TJ

Element Configuration :

Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Part Number :

*K6

FET Feature :

Logic Level Gate

Terminal Finish :

TIN COPPER

Vgs(th) (Max) @ Id :

1V @ 1mA

Mount :

Surface Mount

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

1 Ω @ 300mA, 4V

Factory Lead Time :

16 Weeks

Drain to Source Breakdown Voltage :

20V

Radiation Hardening :

No

Turn-Off Delay Time :

15 ns

Fall Time (Typ) :

10 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Continuous Drain Current (ID) :

300mA

Transistor Application :

SWITCHING

Max Power Dissipation :

150mW

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 10V

Drain Current-Max (Abs) (ID) :

0.3A

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Number of Elements :

2

Pbfree Code :

yes

ECCN Code :

EAR99

Rise Time :

10ns

JESD-609 Code :

e2

Drain to Source Voltage (Vdss) :

20V

Gate to Source Voltage (Vgs) :

8V

Drain-source On Resistance-Max :

1.4Ohm

Turn On Delay Time :

5 ns

Time@Peak Reflow Temperature-Max (s) :

10

Number of Terminations :

6

Mounting Type :

Surface Mount

Power Dissipation :

150mW