EM6K7T2CR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Flat

Packaging :

Cut Tape (CT)

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 200mA, 2.5V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1V @ 1mA

FET Type :

2 N-Channel (Dual)

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

SOT-563, SOT-666

Drain Current-Max (Abs) (ID) :

0.2A

Surface Mount :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 10V

DS Breakdown Voltage-Min :

20V

Drain-source On Resistance-Max :

1.4Ohm

JESD-30 Code :

R-PDSO-F6

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Factory Lead Time :

16 Weeks

FET Feature :

Standard

Power - Max :

150mW

Mounting Type :

Surface Mount

Number of Terminations :

6