BFP780H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Pbfree Code :

yes

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

85 @ 90mA 5V

Max Breakdown Voltage :

6.1V

Max Collector Current :

120mA

Published :

2015

Polarity/Channel Type :

NPN

JESD-30 Code :

R-PDSO-G4

Power - Max :

600mW

Transistor Application :

AMPLIFIER

Noise Figure (dB Typ @ f) :

1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz

Terminal Position :

Dual

Number of Terminations :

4

Operating Temperature :

150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Factory Lead Time :

4 Weeks

Terminal Form :

Gull wing

Transition Frequency :

20000MHz

Mount :

Surface Mount

Lead Free :

Lead Free

Gain :

27dB

Frequency :

1.8GHz

Transistor Type :

NPN

Frequency - Transition :

900MHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

6.1V

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Configuration :

Single

Max Power Dissipation :

600mW

Mounting Type :

Surface Mount

Package / Case :

SC-82A, SOT-343

Halogen Free :

Halogen Free

Case Connection :

Emitter