BFP740ESDH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Gain :

8.5dB ~30.5dB

Package / Case :

SC-82A, SOT-343

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 25mA 3V

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

4.7V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

4.9V

Max Breakdown Voltage :

4.7V

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

AMPLIFIER

Base Part Number :

BFP740

Halogen Free :

Halogen Free

Number of Pins :

4

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Noise Figure (dB Typ @ f) :

0.55dB ~ 1.8dB @ 150MHz ~ 10GHz

Power Dissipation :

160mW

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Transition Frequency :

45000MHz

Max Collector Current :

45mA

Number of Elements :

1

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Published :

2003

Frequency :

45GHz

Transistor Type :

NPN

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

4.2V

Transistor Element Material :

SILICON GERMANIUM CARBON

Configuration :

Single

JESD-609 Code :

e3

Max Power Dissipation :

160mW

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks