BFP720ESDH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 15mA 3V

Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G4

JESD-609 Code :

e3

Frequency - Transition :

43GHz

Operating Temperature :

150°C TJ

Transistor Type :

NPN

Noise Figure (dB Typ @ f) :

0.55dB ~ 1.55dB @ 150MHz ~ 10GHz

Transistor Element Material :

SILICON GERMANIUM CARBON

Polarity/Channel Type :

NPN

Number of Elements :

1

Transition Frequency :

43000MHz

Power Dissipation :

100mW

Mount :

Surface Mount

Transistor Application :

AMPLIFIER

Max Power Dissipation :

100mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Halogen Free :

Halogen Free

Terminal Form :

Gull wing

Number of Terminations :

4

Package / Case :

SC-82A, SOT-343

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

4.2V

Published :

2010

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Max Breakdown Voltage :

4.7V

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

4.9V

Contact Plating :

Tin

Base Part Number :

BFP720

Max Collector Current :

30mA

Highest Frequency Band :

X B

Gain :

11dB ~ 30.5dB

Collector Emitter Breakdown Voltage :

4.7V