BFP740E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Package :

Bulk

Transistor Type :

NPN

Power - Max :

160mW

Mounting :

Surface Mount

Frequency :

42000 MHz

Collector-Emitter Voltage :

4 V

Continuous Collector Current :

45

Power Gain :

31.5(dB)

Rad Hardened :

No

Collector-Base Voltage :

13(V)

Current - Collector (Ic) (Max) :

30mA

Transition Frequency :

44

Series :

-

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 25mA, 3V

Pin Count :

3 +Tab

Supplier Device Package :

PG-SOT343-4

Collector Current (DC) (Max) :

0.03 A

Noise Figure (dB Typ @ f) :

0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz

Emitter-Base Voltage :

1.2(V)

Voltage - Collector Emitter Breakdown (Max) :

4.7V

Configuration :

Single Dual Emitter

Collector Current (DC) :

0.045(A)

Gain :

27dB

Mounting Type :

Surface Mount

Package Type :

SOT-343

Type :

NPN

Operating Temperature :

150°C (TJ)

Operating Temperature Classification :

Military

Manufacturer :

Infineon Technologies AG

Number of Elements :

1

Category :

Bipolar RF

Reach Compliance Code :

Compliant

Product Status :

Active

Power Dissipation :

160

DC Current Gain :

160

Transistor Polarity :

NPN

Package / Case :

SC-82A, SOT-343

Operating Temp Range :

-65C to 150C

Frequency - Transition :

42GHz

Packaging :

Tape and Reel