BFP720H6327XTSA1
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- Mfr.Part #
- BFP720H6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-82A, SOT-343
- Datasheet
- Download
- Description
- RF TRANS NPN 4.7V 45GHZ SOT343
- Stock
- 37,997
- In Stock ：
- 37,997
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Noise Figure (dB Typ @ f) :
- 0.4dB ~ 0.95dB @ 150MHz ~ 10GHz
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 25mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 4.7V
- Polarity/Channel Type :
- NPN
- Base Part Number :
- BFP720
- Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Max Power Dissipation :
- 100mW
- Transistor Type :
- NPN
- Published :
- 2009
- Transition Frequency :
- 45000MHz
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 13mA 3V
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Gain :
- 10.5dB ~ 28.5dB
- Collector Emitter Voltage (VCEO) :
- 4V
- Power Dissipation :
- 100mW
- Terminal Form :
- Gull wing
- Number of Terminations :
- 4
- Package / Case :
- SC-82A, SOT-343
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 4 Weeks
- Halogen Free :
- Halogen Free
- Frequency :
- 45GHz
- JESD-30 Code :
- R-PDSO-G4
- Max Breakdown Voltage :
- 4.7V
- Transistor Element Material :
- SILICON GERMANIUM CARBON
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 13V
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 1.2V
- Datasheets
- BFP720H6327XTSA1
BFP720H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Infineon Technologies stock available at
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