BFP720H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Voltage (VCEO) :

4V

Max Breakdown Voltage :

4.7V

Lead Free :

Lead Free

Number of Elements :

1

Contact Plating :

Tin

Base Part Number :

BFP720

Halogen Free :

Halogen Free

RoHS Status :

ROHS3 Compliant

Noise Figure (dB Typ @ f) :

0.4dB ~ 0.95dB @ 150MHz ~ 10GHz

Frequency :

45GHz

Collector Emitter Breakdown Voltage :

4.7V

Published :

2009

Terminal Form :

Gull wing

Number of Terminations :

4

Configuration :

Single

Transistor Application :

AMPLIFIER

Operating Temperature :

150°C TJ

Transition Frequency :

45000MHz

Package / Case :

SC-82A, SOT-343

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Base Voltage (VCBO) :

13V

Mount :

Surface Mount

Transistor Type :

NPN

Terminal Position :

Dual

Max Power Dissipation :

100mW

Polarity/Channel Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

Gain :

10.5dB ~ 28.5dB

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 13mA 3V

Power Dissipation :

100mW

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

1.2V

Transistor Element Material :

SILICON GERMANIUM CARBON

JESD-30 Code :

R-PDSO-G4

Mounting Type :

Surface Mount

Max Collector Current :

25mA