BFP740FESDH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Base Voltage (VCBO) :

4.9V

Halogen Free :

Halogen Free

Factory Lead Time :

8 Weeks

Number of Elements :

1

Base Part Number :

BFP740

Number of Terminations :

4

Max Power Dissipation :

160mW

Published :

2010

Packaging :

Tape and Reel (TR)

Configuration :

Single

Terminal Position :

Dual

Highest Frequency Band :

X B

Noise Figure (dB Typ @ f) :

0.5dB ~ 1.45dB @ 150MHz ~ 10GHz

Power - Max :

160mW

Package / Case :

4-SMD, Flat Leads

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 25mA 3V

Transistor Application :

AMPLIFIER

Collector Emitter Voltage (VCEO) :

4.2V

Frequency - Transition :

47GHz

Transistor Type :

NPN

RoHS Status :

ROHS3 Compliant

Gain :

9dB ~ 31dB

Reference Standard :

AEC-Q101

ECCN Code :

EAR99

Contact Plating :

Tin

Collector Emitter Breakdown Voltage :

4.7V

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Collector Current :

45mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Polarity/Channel Type :

NPN

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON GERMANIUM CARBON

Transition Frequency :

47000MHz

JESD-609 Code :

e3