APTM50DSKM65T3G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pin Count :

25

Gate to Source Voltage (Vgs) :

30V

Max Power Dissipation :

390W

DS Breakdown Voltage-Min :

500V

Pbfree Code :

yes

ECCN Code :

EAR99

FET Type :

2 N-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

25

JESD-609 Code :

e1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Bulk

Package / Case :

SP3

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

51A

Power Dissipation :

390W

Terminal Form :

UNSPECIFIED

Turn On Delay Time :

21 ns

Drain-source On Resistance-Max :

0.078Ohm

Operating Mode :

ENHANCEMENT MODE

Published :

2012

Fall Time (Typ) :

93 ns

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Number of Pins :

3

RoHS Status :

RoHS Compliant

Case Connection :

Isolated

Factory Lead Time :

22 Weeks

Drain to Source Voltage (Vdss) :

500V

Rise Time :

38ns

Radiation Hardening :

No

Operating Temperature :

-40°C~150°C TJ

FET Feature :

Standard

Number of Elements :

2

Turn-Off Delay Time :

75 ns

Terminal Finish :

TIN SILVER COPPER

Terminal Position :

UPPER

Mount :

Chassis Mount, Screw

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Rds On (Max) @ Id, Vgs :

78m Ω @ 25.5A, 10V

Transistor Element Material :

SILICON

Mounting Type :

Chassis Mount