APTM100A18FTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Additional Feature :

AVALANCHE RATED

Rise Time :

12ns

Vgs(th) (Max) @ Id :

5V @ 5mA

JESD-609 Code :

e1

DS Breakdown Voltage-Min :

1000V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SP4

Terminal Form :

UNSPECIFIED

FET Type :

2 N-Channel (Half Bridge)

Mount :

Chassis Mount, Screw

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Published :

2006

Max Power Dissipation :

780W

Number of Elements :

2

Avalanche Energy Rating (Eas) :

3000 mJ

Pin Count :

12

Continuous Drain Current (ID) :

43A

Number of Terminations :

12

Terminal Finish :

TIN SILVER COPPER

Packaging :

Bulk

Transistor Application :

SWITCHING

Factory Lead Time :

36 Weeks

FET Feature :

Standard

Drain to Source Voltage (Vdss) :

1000V 1kV

Input Capacitance (Ciss) (Max) @ Vds :

10400pF @ 25V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C~150°C TJ

Radiation Hardening :

No

Turn On Delay Time :

18 ns

Gate Charge (Qg) (Max) @ Vgs :

372nC @ 10V

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

210m Ω @ 21.5A, 10V

ECCN Code :

EAR99

Terminal Position :

UPPER

Case Connection :

Isolated

Fall Time (Typ) :

40 ns

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

4

Turn-Off Delay Time :

155 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation :

780W