APTM100A40FT1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

UNSPECIFIED

Continuous Drain Current (ID) :

21A

JESD-609 Code :

e1

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

150 ns

Power Dissipation :

390W

Gate Charge (Qg) (Max) @ Vgs :

305nC @ 10V

Number of Pins :

1

Rise Time :

40ns

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

390W

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Terminal Position :

UPPER

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Package / Case :

SP1

Drain-source On Resistance-Max :

0.48Ohm

Operating Temperature :

-40°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Pin Count :

12

Number of Elements :

2

FET Type :

2 N-Channel (Half Bridge)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Mount :

Chassis Mount, Screw

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Number of Terminations :

12

ECCN Code :

EAR99

Turn On Delay Time :

44 ns

Fall Time (Typ) :

38 ns

Mounting Type :

Chassis Mount

Input Capacitance (Ciss) (Max) @ Vds :

7868pF @ 25V

FET Feature :

Standard

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

1000V 1kV

Terminal Finish :

TIN SILVER COPPER

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

480m Ω @ 18A, 10V