APTM100DA18T1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Position :

UPPER

Gate Charge (Qg) (Max) @ Vgs :

570nC @ 10V

Vgs (Max) :

±30V

Case Connection :

Isolated

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-40°C~150°C TJ

Pin Count :

12

ECCN Code :

EAR99

Mounting Type :

Chassis Mount

Number of Elements :

1

Published :

2007

RoHS Status :

RoHS Compliant

Number of Pins :

1

Input Capacitance (Ciss) (Max) @ Vds :

14800pF @ 25V

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Drain to Source Voltage (Vdss) :

1000V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

260A

Rds On (Max) @ Id, Vgs :

216m Ω @ 33A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

UNSPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

12

Power Dissipation :

657W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Bulk

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Mount :

Chassis Mount, Screw

Power Dissipation-Max :

657W Tc

JESD-609 Code :

e1

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

40A

Package / Case :

SP1

Current - Continuous Drain (Id) @ 25°C :

40A Tc