APTM08TDUM04PG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pulsed Drain Current-Max (IDM) :

250A

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

153nC @ 10V

Continuous Drain Current (ID) :

120A

Number of Terminations :

21

FET Feature :

Standard

Drain to Source Voltage (Vdss) :

75V

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

UPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

75V

Avalanche Energy Rating (Eas) :

1500 mJ

Number of Pins :

6

Vgs(th) (Max) @ Id :

4V @ 1mA

Mount :

Chassis Mount, Screw

RoHS Status :

RoHS Compliant

Pin Count :

21

Operating Temperature :

-40°C~150°C TJ

Terminal Finish :

TIN SILVER COPPER

Package / Case :

SP6

Published :

2016

Packaging :

Bulk

Case Connection :

Isolated

JESD-609 Code :

e1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

4530pF @ 25V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 60A, 10V

Power Dissipation :

138W

Gate to Source Voltage (Vgs) :

30V

FET Type :

6 N-Channel (3-Phase Bridge)

JESD-30 Code :

R-XUFM-X21

Number of Elements :

6

Mounting Type :

Chassis Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.0045ohm

Configuration :

3 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

Max Power Dissipation :

138W

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

UNSPECIFIED