APTM08TAM04PG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

138W

Pbfree Code :

yes

Radiation Hardening :

No

Max Power Dissipation :

138W

Packaging :

Bulk

Turn-Off Delay Time :

100 ns

Number of Pins :

6

Number of Elements :

6

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

153nC @ 10V

Terminal Finish :

TIN SILVER COPPER

Mounting Type :

Chassis Mount

Package / Case :

SP6

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

75V

Factory Lead Time :

36 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

4530pF @ 25V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

120A

Rise Time :

60ns

Mount :

Chassis Mount, Screw

Drain-source On Resistance-Max :

0.0045ohm

DS Breakdown Voltage-Min :

75V

Operating Temperature :

-40°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 1mA

Pin Count :

21

Transistor Application :

SWITCHING

Terminal Position :

UPPER

Turn On Delay Time :

35 ns

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Avalanche Energy Rating (Eas) :

1500 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-XUFM-X21

Pulsed Drain Current-Max (IDM) :

250A

FET Type :

6 N-Channel (3-Phase Bridge)

FET Feature :

Standard

Terminal Form :

UNSPECIFIED

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 60A, 10V

Number of Terminations :

21

Fall Time (Typ) :

65 ns

Case Connection :

Isolated

Configuration :

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Element Material :

SILICON