APTM100DA18TG

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Mfr.Part #
APTM100DA18TG
Manufacturer
Microchip Technology
Package / Case
SP4
Datasheet
Download
Description
MOSFET N-CH 1000V 43A SP4
Stock
17,791
In Stock :
17,791

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
4
Factory Lead Time :
36 Weeks
Pbfree Code :
yes
Continuous Drain Current (ID) :
43A
Transistor Application :
SWITCHING
Drain to Source Voltage (Vdss) :
1000V
Packaging :
Bulk
Terminal Finish :
TIN SILVER COPPER
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
UNSPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
RoHS Status :
RoHS Compliant
Avalanche Energy Rating (Eas) :
3000 mJ
Radiation Hardening :
No
Turn-Off Delay Time :
155 ns
Published :
2006
Turn On Delay Time :
18 ns
Fall Time (Typ) :
40 ns
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
210m Ω @ 21.5A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Rise Time :
12ns
Terminal Position :
UPPER
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
372nC @ 10V
Power Dissipation :
780W
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
5V @ 5mA
Vgs (Max) :
±30V
Gate to Source Voltage (Vgs) :
30V
Pin Count :
12
Number of Terminations :
12
Package / Case :
SP4
Input Capacitance (Ciss) (Max) @ Vds :
10400pF @ 25V
JESD-609 Code :
e1
Power Dissipation-Max :
780W Tc
Case Connection :
Isolated
Current - Continuous Drain (Id) @ 25°C :
43A Tc
Mounting Type :
Chassis Mount
Additional Feature :
AVALANCHE RATED
Mount :
Chassis Mount, Screw
Operating Temperature :
-40°C~150°C TJ
Datasheets
APTM100DA18TG
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology APTM100DA18TG from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Number of Terminations:12, Package / Case:SP4, Mounting Type:Chassis Mount, Operating Temperature:-40°C~150°C TJ, APTM100DA18TG pinout, APTM100DA18TG datasheet PDF, APTM100DA18TG amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology APTM100DA18TG ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Bulk 210m Ω @ 21.5A, 10V ±30V 10400pF @ 25V 372nC @ 10V 1000V SP4

APTM100DA18TG Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 3000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10400pF @ 25V.This device conducts a continuous drain current (ID) of 43A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 155 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 18 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

APTM100DA18TG Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 43A
the turn-off delay time is 155 ns
a 1000V drain to source voltage (Vdss)


APTM100DA18TG Applications


There are a lot of Microsemi Corporation
APTM100DA18TG applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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