APTM100DA18TG
- Mfr.Part #
- APTM100DA18TG
- Manufacturer
- Microchip Technology
- Package / Case
- SP4
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 43A SP4
- Stock
- 17,791
- In Stock :
- 17,791
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 4
- Factory Lead Time :
- 36 Weeks
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 43A
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 1000V
- Packaging :
- Bulk
- Terminal Finish :
- TIN SILVER COPPER
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- UNSPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND THERMISTOR
- RoHS Status :
- RoHS Compliant
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 155 ns
- Published :
- 2006
- Turn On Delay Time :
- 18 ns
- Fall Time (Typ) :
- 40 ns
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 210m Ω @ 21.5A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Rise Time :
- 12ns
- Terminal Position :
- UPPER
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 372nC @ 10V
- Power Dissipation :
- 780W
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 5V @ 5mA
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Pin Count :
- 12
- Number of Terminations :
- 12
- Package / Case :
- SP4
- Input Capacitance (Ciss) (Max) @ Vds :
- 10400pF @ 25V
- JESD-609 Code :
- e1
- Power Dissipation-Max :
- 780W Tc
- Case Connection :
- Isolated
- Current - Continuous Drain (Id) @ 25°C :
- 43A Tc
- Mounting Type :
- Chassis Mount
- Additional Feature :
- AVALANCHE RATED
- Mount :
- Chassis Mount, Screw
- Operating Temperature :
- -40°C~150°C TJ
- Datasheets
- APTM100DA18TG
N-Channel Bulk 210m Ω @ 21.5A, 10V ±30V 10400pF @ 25V 372nC @ 10V 1000V SP4
APTM100DA18TG Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 3000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10400pF @ 25V.This device conducts a continuous drain current (ID) of 43A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 155 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 18 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APTM100DA18TG Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 43A
the turn-off delay time is 155 ns
a 1000V drain to source voltage (Vdss)
APTM100DA18TG Applications
There are a lot of Microsemi Corporation
APTM100DA18TG applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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