APTM50A15FT1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Chassis Mount

FET Type :

2 N-Channel (Half Bridge)

Terminal Position :

UPPER

Packaging :

Bulk

Mount :

Chassis Mount, Screw

Terminal Form :

UNSPECIFIED

Operating Temperature :

-40°C~150°C TJ

Published :

2007

Number of Elements :

2

Pin Count :

12

Drain to Source Voltage (Vdss) :

500V

Number of Terminations :

12

Number of Pins :

1

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified

Reach Compliance Code :

Unknown

DS Breakdown Voltage-Min :

500V

Vgs(th) (Max) @ Id :

5V @ 1mA

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

Isolated

Max Power Dissipation :

208W

Package / Case :

SP1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

25A

Power Dissipation :

208W

FET Feature :

Standard

Input Capacitance (Ciss) (Max) @ Vds :

5448pF @ 25V

Rds On (Max) @ Id, Vgs :

180m Ω @ 21A, 10V