APTM120A65FT1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Pbfree Code :

yes

Continuous Drain Current (ID) :

16A

FET Feature :

Standard

Drain to Source Voltage (Vdss) :

1200V 1.2kV

JESD-609 Code :

e1

Terminal Position :

UPPER

Transistor Element Material :

SILICON

Mounting Type :

Chassis Mount

Packaging :

Bulk

Pin Count :

12

Rise Time :

31ns

Turn-Off Delay Time :

170 ns

Turn On Delay Time :

50 ns

Power Dissipation :

390W

Drain-source On Resistance-Max :

0.78Ohm

Max Power Dissipation :

390W

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

7736pF @ 25V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Number of Pins :

1

Rds On (Max) @ Id, Vgs :

780m Ω @ 14A, 10V

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Package / Case :

SP1

Factory Lead Time :

22 Weeks

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

48 ns

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

ECCN Code :

EAR99

Terminal Form :

UNSPECIFIED

Mount :

Chassis Mount, Screw

Operating Temperature :

-40°C~150°C TJ

Terminal Finish :

TIN SILVER COPPER

RoHS Status :

RoHS Compliant

Number of Terminations :

12

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Published :

2007

Additional Feature :

AVALANCHE RATED