APTM100H18FG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Case Connection :

Isolated

JESD-609 Code :

e1

Number of Terminations :

12

Rise Time :

12ns

FET Type :

4 N-Channel (H-Bridge)

Terminal Form :

UNSPECIFIED

Pin Count :

12

Gate to Source Voltage (Vgs) :

30V

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

172A

Published :

2006

Number of Elements :

4

Rds On (Max) @ Id, Vgs :

210m Ω @ 21.5A, 10V

Transistor Element Material :

SILICON

Power Dissipation :

780W

Operating Temperature :

-40°C~150°C TJ

Drain-source On Resistance-Max :

0.21Ohm

Pbfree Code :

yes

ECCN Code :

EAR99

Terminal Finish :

TIN SILVER COPPER

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

3000 mJ

Package / Case :

SP6

Terminal Position :

UPPER

Factory Lead Time :

36 Weeks

Mounting Type :

Chassis Mount

Fall Time (Typ) :

40 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

FET Feature :

Standard

Packaging :

Bulk

Number of Pins :

6

Vgs(th) (Max) @ Id :

5V @ 5mA

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

1000V 1kV

Turn-Off Delay Time :

155 ns

JESD-30 Code :

R-XUFM-X12

Mount :

Chassis Mount, Screw

Input Capacitance (Ciss) (Max) @ Vds :

10400pF @ 25V

Continuous Drain Current (ID) :

43A

Max Power Dissipation :

780W

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

1000V

Gate Charge (Qg) (Max) @ Vgs :

372nC @ 10V

Turn On Delay Time :

18 ns