APTM100DSK35T3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

DS Breakdown Voltage-Min :

1000V

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Power Dissipation :

390W

Transistor Element Material :

SILICON

Number of Elements :

2

Transistor Application :

SWITCHING

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

88A

Mounting Type :

Chassis Mount

Pin Count :

25

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Rise Time :

12ns

Operating Temperature :

-40°C~150°C TJ

Max Power Dissipation :

390W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Standard

Factory Lead Time :

36 Weeks

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Fall Time (Typ) :

40 ns

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 25V

Number of Terminations :

25

Published :

2012

Gate Charge (Qg) (Max) @ Vgs :

186nC @ 10V

Package / Case :

SP3

Rds On (Max) @ Id, Vgs :

420m Ω @ 11A, 10V

Packaging :

Bulk

Pbfree Code :

yes

Additional Feature :

AVALANCHE RATED

Terminal Finish :

TIN SILVER COPPER

FET Type :

2 N-Channel (Dual)

Mount :

Chassis Mount, Screw

JESD-609 Code :

e1

Terminal Form :

UNSPECIFIED

Drain to Source Voltage (Vdss) :

1000V 1kV

Turn On Delay Time :

18 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

UPPER

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

155 ns

Case Connection :

Isolated

Continuous Drain Current (ID) :

22A