2SD2703TL
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- Mfr.Part #
- 2SD2703TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A TUMT3
- Stock
- 9,850
- In Stock ：
- 9,850
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 120mV
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 25mA, 500mA
- Contact Plating :
- Copper, Tin
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 30V
- JESD-609 Code :
- e2
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- 2SD2703
- Collector Base Voltage (VCBO) :
- 30V
- Published :
- 2013
- Max Collector Current :
- 1A
- HTS Code :
- 8541.21.00.75
- Width :
- 1.8mm
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 270
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Max Frequency :
- 100MHz
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Length :
- 2.1mm
- Terminal Finish :
- TIN COPPER
- Collector Emitter Breakdown Voltage :
- 30V
- Pbfree Code :
- yes
- Max Power Dissipation :
- 800mW
- Transition Frequency :
- 320MHz
- Height :
- 820μm
- Gain Bandwidth Product :
- 320MHz
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 30V
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Package / Case :
- 3-SMD, Flat Lead
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 13 Weeks
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- 2SD2703TL
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, Flat Lead Tape & Reel (TR) Surface Mount
2SD2703TL Overview
DC current gain in this device equals 270 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 120mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 350mV @ 25mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 320MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 1A volts.
2SD2703TL Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 320MHz
2SD2703TL Applications
There are a lot of ROHM Semiconductor
2SD2703TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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