2SD2014
- Mfr.Part #
- 2SD2014
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 4A TO220F
- Stock
- 5,397
- In Stock :
- 5,397
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 3mA, 3A
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Supplier Device Package :
- TO-220F
- ECCN Code :
- EAR99
- Product Status :
- Active
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Frequency - Transition :
- 75MHz
- Transistor Type :
- NPN - Darlington
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 4 A
- Number of Terminations :
- 3
- Max Power Dissipation :
- 25W
- Package Shape :
- RECTANGULAR
- Collector Current-Max (IC) :
- 4 A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 75MHz
- Max Collector Current :
- 4A
- Manufacturer :
- Sanken Electric Co Ltd
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package :
- Bulk
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Packaging :
- Bulk
- RoHS Status :
- RoHS Compliant
- Polarity/Channel Type :
- NPN
- DC Current Gain-Min (hFE) :
- 2000
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Power Dissipation-Max (Abs) :
- 25 W
- Power - Max :
- 25W
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Terminal Form :
- THROUGH-HOLE
- Published :
- 2001
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Number of Terminals :
- 3
- Transistor Element Material :
- SILICON
- Series :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 3A 2V
- Pbfree Code :
- yes
- Case Connection :
- Isolated
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSFM-T3
- Collector Emitter Breakdown Voltage :
- 80V
- Collector-Emitter Voltage-Max :
- 80 V
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 0.067
- Pin Count :
- 3
- Mount :
- Through Hole
- Package / Case :
- TO-220-3 Full Pack
- Factory Lead Time :
- 12 Weeks
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Datasheets
- 2SD2014

NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Bulk Through Hole
2SD2014 Overview
This device has a DC current gain of 2000 @ 3A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 75MHz.Single BJT transistor comes in a supplier device package of TO-220F.Maximum collector-emitter voltage can be set to 80 V.Detection of Collector Emitter Breakdown at 80 V maximal voltage is present.The maximum collector current is 4A volts.
2SD2014 Features
the DC current gain for this device is 2000 @ 3A 2V
the vce saturation(Max) is 1.5V @ 3mA, 3A
a transition frequency of 75MHz
the supplier device package of TO-220F
2SD2014 Applications
There are a lot of Sanken
2SD2014 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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