2SD2033AT114E

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Mfr.Part #
2SD2033AT114E
Manufacturer
ROHM Semiconductor
Package / Case
HRT
Datasheet
Download
Description
TRANS NPN 160V 1.5A HRT
Stock
39,124
In Stock :
39,124

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Collector Emitter Voltage (VCEO) :
2V
Current - Collector Cutoff (Max) :
1μA ICBO
Qualification Status :
Not Qualified
Transistor Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA 5V
Package / Case :
HRT
Max Power Dissipation :
1.8W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Collector Emitter Breakdown Voltage :
160V
Transition Frequency :
80MHz
Terminal Position :
Single
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
2V @ 100mA, 1A
Max Collector Current :
1.5A
Packaging :
Tape and Reel (TR)
Current Rating :
1.5A
Max Breakdown Voltage :
160V
Mount :
Through Hole
Base Part Number :
2SD2033
Voltage - Rated DC :
160V
Mounting Type :
Through Hole
Polarity/Channel Type :
NPN
Frequency - Transition :
80MHz
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Lead Free :
Lead Free
Pin Count :
3
Published :
2004
Transistor Application :
AMPLIFIER
Terminal Finish :
NOT SPECIFIED
Number of Terminations :
3
Configuration :
Single
Operating Temperature :
150°C TJ
JESD-30 Code :
R-PSIP-T3
Number of Elements :
1
Datasheets
2SD2033AT114E
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SD2033AT114E from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:HRT, Base Part Number:2SD2033, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:150°C TJ, 2SD2033AT114E pinout, 2SD2033AT114E datasheet PDF, 2SD2033AT114E amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SD2033AT114E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor 2SD2033AT114E


NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN HRT Tape & Reel (TR) Through Hole

2SD2033AT114E Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 80MHz in the part.Single BJT transistor can be broken down at a voltage of 160V volts.When collector current reaches its maximum, it can reach 1.5A volts.

2SD2033AT114E Features


the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 2V @ 100mA, 1A
the current rating of this device is 1.5A
a transition frequency of 80MHz


2SD2033AT114E Applications


There are a lot of ROHM Semiconductor
2SD2033AT114E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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