2SD2096T114E

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Mfr.Part #
2SD2096T114E
Manufacturer
ROHM Semiconductor
Package / Case
HRT
Datasheet
Download
Description
TRANS NPN 60V 3A HRT
Stock
593
In Stock :
593

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Voltage - Rated DC :
60V
Current - Collector Cutoff (Max) :
10μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 500mA 5V
Number of Elements :
1
Max Power Dissipation :
1.8W
Mounting Type :
Through Hole
Number of Terminations :
3
Collector Emitter Voltage (VCEO) :
1V
Qualification Status :
Not Qualified
Transition Frequency :
8MHz
Lead Free :
Lead Free
Vce Saturation (Max) @ Ib, Ic :
1V @ 200mA, 2A
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Operating Temperature :
150°C TJ
JESD-30 Code :
R-PSIP-T3
Polarity/Channel Type :
NPN
Collector Emitter Breakdown Voltage :
60V
JESD-609 Code :
e3/e2
Max Collector Current :
3A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
10
Terminal Finish :
TIN/TIN COPPER
Frequency - Transition :
8MHz
Base Part Number :
2SD2096
Pin Count :
3
Current Rating :
3A
Max Breakdown Voltage :
60V
Transistor Type :
NPN
Package / Case :
HRT
Transistor Application :
AMPLIFIER
Terminal Position :
Single
Packaging :
Tape and Reel (TR)
Transistor Element Material :
SILICON
Published :
2004
Mount :
Through Hole
Peak Reflow Temperature (Cel) :
260
Datasheets
2SD2096T114E
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SD2096T114E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:150°C TJ, Base Part Number:2SD2096, Package / Case:HRT, 2SD2096T114E pinout, 2SD2096T114E datasheet PDF, 2SD2096T114E amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SD2096T114E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor 2SD2096T114E


NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN HRT Tape & Reel (TR) Through Hole

2SD2096T114E Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 5V.When VCE saturation is 1V @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 3A.In the part, the transition frequency is 8MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 3A volts can be achieved.

2SD2096T114E Features


the DC current gain for this device is 100 @ 500mA 5V
the vce saturation(Max) is 1V @ 200mA, 2A
the current rating of this device is 3A
a transition frequency of 8MHz


2SD2096T114E Applications


There are a lot of ROHM Semiconductor
2SD2096T114E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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