2SD2082
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- Mfr.Part #
- 2SD2082
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 120V 16A TO3PF
- Stock
- 23,481
- In Stock ：
- 23,481
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 8A 4V
- Base-Emitter Saturation Voltage (Max) :
- 2.5(V)
- Polarity/Channel Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Operating Temp Range :
- -55C to 150C
- Collector Current-Max (IC) :
- 16 A
- Collector-Base Voltage :
- 120(V)
- Case Connection :
- Isolated
- Number of Terminals :
- 3
- Frequency - Transition :
- 20MHz
- Package Shape :
- RECTANGULAR
- Maximum Collector Cut-off Current :
- 10
- Published :
- 2001
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Collector Current (DC) :
- 16(A)
- Surface Mount :
- No
- Packaging :
- Bulk
- Collector-Emitter Voltage-Max :
- 120 V
- Emitter-Base Voltage :
- 6(V)
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Number of Elements :
- 1
- Max Collector Current :
- 16A
- DC Current Gain-Min (hFE) :
- 2000
- Mounting Type :
- Through Hole
- Transition Frequency :
- 20MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 16mA, 8A
- Polarity :
- NPN
- Power Dissipation-Max (Abs) :
- 75 W
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 120V
- Factory Lead Time :
- 36 Weeks
- DC Current Gain :
- 2000
- Power - Max :
- 75W
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 0.05
- Current - Collector (Ic) (Max) :
- 16 A
- Operating Temperature :
- 150°C TJ
- Product Status :
- Obsolete
- Series :
- -
- Pin Count :
- 3
- Collector-Emitter Voltage :
- 120(V)
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 75W
- JESD-30 Code :
- R-PSFM-T3
- Terminal Form :
- THROUGH-HOLE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package :
- Bulk
- Number of Terminations :
- 3
- Package / Case :
- TO-3P-3 Full Pack
- Manufacturer :
- Sanken Electric Co Ltd
- Operating Temperature Classification :
- Military
- Mount :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 120 V
- Supplier Device Package :
- TO-3PF
- Package Type :
- TO-3PF
- Rad Hardened :
- No
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting :
- Through Hole
- Transistor Type :
- NPN - Darlington
- Reach Compliance Code :
- Unknown
- Power Dissipation :
- 75(W)
- Datasheets
- 2SD2082
NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3 Full Pack Bulk Through Hole
2SD2082 Overview
In this device, the DC current gain is 2000 @ 8A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 16mA, 8A.20MHz is present in the transition frequency.Supplier device package TO-3PF comes with the product.Voltage of maximal collector-emitter is set to 120 V.The device exhibits a collector-emitter breakdown at 120 V.Maximum collector currents can be below 16A volts.
2SD2082 Features
the DC current gain for this device is 2000 @ 8A 4V
the vce saturation(Max) is 1.5V @ 16mA, 8A
a transition frequency of 20MHz
the supplier device package of TO-3PF
2SD2082 Applications
There are a lot of Sanken
2SD2082 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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