2SD2015
- Mfr.Part #
- 2SD2015
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 120V 4A TO220F
- Stock
- 1,388
- In Stock :
- 1,388
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2001
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSFM-T3
- Manufacturer :
- Sanken Electric Co Ltd
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Factory Lead Time :
- 12 Weeks
- Base-Emitter Saturation Voltage (Max) :
- 2(V)
- Case Connection :
- Isolated
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 2A 2V
- Frequency - Transition :
- 40MHz
- DC Current Gain :
- 2000
- Surface Mount :
- No
- Operating Temp Range :
- -55C to 150C
- Terminal Form :
- THROUGH-HOLE
- Voltage - Collector Emitter Breakdown (Max) :
- 120 V
- Collector-Emitter Voltage-Max :
- 120 V
- Series :
- -
- Number of Terminals :
- 3
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-220-3 Full Pack
- Rad Hardened :
- No
- Operating Temperature Classification :
- Military
- Polarity :
- NPN
- Package Shape :
- RECTANGULAR
- Collector-Base Voltage :
- 150(V)
- Power Dissipation-Max (Abs) :
- 25 W
- Packaging :
- Bulk
- Maximum Collector Cut-off Current :
- 10
- Pin Count :
- 3
- Reach Compliance Code :
- Unknown
- Power Dissipation :
- 25(W)
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 2mA, 2A
- Transition Frequency :
- 40MHz
- Transistor Type :
- NPN - Darlington
- Collector Emitter Breakdown Voltage :
- 120V
- Max Collector Current :
- 4A
- Collector Current-Max (IC) :
- 4 A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector (Ic) (Max) :
- 4 A
- RoHS Status :
- RoHS Compliant
- DC Current Gain-Min (hFE) :
- 2000
- Power - Max :
- 25W
- Emitter-Base Voltage :
- 6(V)
- Collector Current (DC) :
- 4(A)
- Mount :
- Through Hole
- Product Status :
- Active
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Mounting :
- Through Hole
- Collector-Emitter Voltage :
- 120(V)
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 0.167
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Package Type :
- TO-220F
- Package :
- Bulk
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-220F
- Max Power Dissipation :
- 25W
- Datasheets
- 2SD2015

NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Bulk Through Hole
2SD2015 Overview
DC current gain in this device equals 2000 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 2mA, 2A.As a result, the part has a transition frequency of 40MHz.Product comes in TO-220F supplier package.Maximal collector-emitter voltage can be set at 120 V.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 4A volts.
2SD2015 Features
the DC current gain for this device is 2000 @ 2A 2V
the vce saturation(Max) is 1.5V @ 2mA, 2A
a transition frequency of 40MHz
the supplier device package of TO-220F
2SD2015 Applications
There are a lot of Sanken
2SD2015 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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