2SD2015
- Mfr.Part #
- 2SD2015
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 120V 4A TO220F
- Stock
- 1,388
- In Stock :
- 1,388
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Package Type :
- TO-220F
- Package / Case :
- TO-220-3 Full Pack
- Collector-Emitter Voltage :
- 120(V)
- Series :
- -
- Operating Temp Range :
- -55C to 150C
- Mounting :
- Through Hole
- Polarity :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Bulk
- Collector-Emitter Voltage-Max :
- 120 V
- Supplier Device Package :
- TO-220F
- Pin Count :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 120 V
- Factory Lead Time :
- 12 Weeks
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 0.167
- Maximum Collector Cut-off Current :
- 10
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Rad Hardened :
- No
- Transition Frequency :
- 40MHz
- Reach Compliance Code :
- Unknown
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Transistor Application :
- SWITCHING
- Terminal Form :
- THROUGH-HOLE
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 2mA, 2A
- Package :
- Bulk
- RoHS Status :
- RoHS Compliant
- DC Current Gain-Min (hFE) :
- 2000
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Collector Current (DC) :
- 4(A)
- Published :
- 2001
- Collector Emitter Breakdown Voltage :
- 120V
- Collector Current-Max (IC) :
- 4 A
- Case Connection :
- Isolated
- Package Shape :
- RECTANGULAR
- Manufacturer :
- Sanken Electric Co Ltd
- Qualification Status :
- Not Qualified
- Frequency - Transition :
- 40MHz
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Base-Emitter Saturation Voltage (Max) :
- 2(V)
- Power Dissipation-Max (Abs) :
- 25 W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 2A 2V
- Collector-Base Voltage :
- 150(V)
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Power - Max :
- 25W
- Emitter-Base Voltage :
- 6(V)
- Surface Mount :
- No
- Operating Temperature Classification :
- Military
- Mount :
- Through Hole
- Number of Terminals :
- 3
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 25(W)
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Power Dissipation :
- 25W
- DC Current Gain :
- 2000
- Product Status :
- Active
- Transistor Type :
- NPN - Darlington
- Max Collector Current :
- 4A
- Current - Collector (Ic) (Max) :
- 4 A
- Datasheets
- 2SD2015

NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Bulk Through Hole
2SD2015 Overview
DC current gain in this device equals 2000 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 2mA, 2A.As a result, the part has a transition frequency of 40MHz.Product comes in TO-220F supplier package.Maximal collector-emitter voltage can be set at 120 V.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 4A volts.
2SD2015 Features
the DC current gain for this device is 2000 @ 2A 2V
the vce saturation(Max) is 1.5V @ 2mA, 2A
a transition frequency of 40MHz
the supplier device package of TO-220F
2SD2015 Applications
There are a lot of Sanken
2SD2015 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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