2SD2018

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Single

Max Breakdown Voltage :

60V

Collector Emitter Voltage (VCEO) :

1.8V

Current Rating :

1A

Published :

2003

Collector Emitter Breakdown Voltage :

60V

Mount :

Through Hole

Transistor Element Material :

SILICON

Number of Terminations :

3

Mounting Type :

Through Hole

Max Power Dissipation :

5W

Package / Case :

TO-225AA, TO-126-3

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

150°C TJ

Qualification Status :

Not Qualified

Case Connection :

Isolated

Voltage - Rated DC :

60V

Reach Compliance Code :

Unknown

Current - Collector Cutoff (Max) :

1μA ICBO

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Contains Lead

Configuration :

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Transistor Application :

AMPLIFIER

DC Current Gain (hFE) (Min) @ Ic, Vce :

6500 @ 1A 10V

Terminal Position :

Single

Transistor Type :

NPN - Darlington

Max Collector Current :

1A

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1mA, 1A

JESD-30 Code :

R-PSFM-T3

HTS Code :

8541.29.00.95